The bipolar magnetotransistor comprises a semiconductor substrate (1), on one side of which there are successively arranged a collector (2), a first base contact (3), an emitter (4), and a second base contact (5). The collector (2) is located as close to the first base contact (3) as possible, while the emitter (4) is next to the second contact (5). The emitter (4) is coupled directly to the second contact (5) and, through a first current source (6), it is straightly switched to the base contact (3), while the collector (2), through a load resistor (7) and a second current source (8), is reversely switched to the first base contact (3). The measured magnetic field (9) is applied perpendicular to the cross-section of the substrate (1), the collector (2) and the contact (3) being the output(10).
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