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DEVICE FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, AND ALUMINUM NITRIDE CRYSTAL GRAINS
DEVICE FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTAL GRAINS, AND ALUMINUM NITRIDE CRYSTAL GRAINS
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机译:氮化铝晶体颗粒的生产设备,氮化铝晶体颗粒的生产方法和氮化铝晶体颗粒
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摘要
Provided are aluminum nitride crystal grains in which each individual grain has a grain size of 0.05 µm to 1 µm and a shape selected from any of a hexagonal prism, a hexagonal drum shape, a hexagonal pyramid, or two hexagonal pyramids where the base surfaces thereof are joined together. A production device (1A) comprises: a first reaction chamber (7a) for generating aluminum chloride gas by reacting hydrogen chloride gas and aluminum heated to a temperature that is the melting point of the aluminum or lower; a second reaction chamber (2a) for growing aluminum nitride crystal grains by reacting ammonia gas and the aluminum chloride gas; a heater (3) for heating the first reaction chamber (7a) and the second reaction chamber (2a); and a shroud (9) for separating the ammonia gas and the aluminum chloride gas up to the second reaction chamber (2a). As a result, a device for producing aluminum nitride crystal grains can be provided with which aluminum nitride crystal grains that are single crystals can be efficiently produced.
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