Device incorporating a field of dots used in biotechnology applications

摘要

The method involves forming a polycrystalline layer (11) on a support (10), where the layer has silicon. An anisotropic plasma etching of all or part of the layer is performed using a gaseous mixture comprising chlorine and helium inside openings, and tips (15) are formed in surface of the layer. The gaseous flow of chlorine is higher than helium during the anisotropic plasma etching. An independent claim is also included for a device comprising field of micrometric points.