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SPIN CONDUCTANCE STRUCTURE, MEMORY ELEMENT, SPIN TRANSISTOR, AND METHOD FOR FORMING SPIN CONDUCTANCE STRUCTURE
SPIN CONDUCTANCE STRUCTURE, MEMORY ELEMENT, SPIN TRANSISTOR, AND METHOD FOR FORMING SPIN CONDUCTANCE STRUCTURE
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机译:自旋导电结构,存储器元件,自旋晶体管以及形成自旋导电结构的方法
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摘要
Provided is technology for high-quality epitaxial growth of a group IV semiconductor (111) surface on a ferromagnetic Heusler alloy (111) surface. This method for forming a spin conductance structure includes: a first ferromagnetic lamination step (S41) in which a single-crystal ferromagnetic Heusler alloy (X(3-x)YxZ, where Z corresponds to the group IV semiconductor) that contains a group IV semiconductor in the constituent elements is laminated on a group IV semiconductor substrate having a surface with a Miller index (111) as the growth surface; a metal supply stopping step (S42) that stops the supply of a metal (corresponding to X(3-x)Yx) of the elements composing the ferromagnetic Heusler alloy; a semiconductor supply stopping step (S44) for stopping the supply of the group IV semiconductor (corresponding to Z) of the elements composing the ferromagnetic Heusler alloy in a state (S43) where the group IV semiconductor surface has been formed on the outermost surface; and a semiconductor lamination step (S45) for laminating the group IV semiconductor on the group IV semiconductor surface formed on the outermost surface.
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机译:提供了用于在铁磁赫斯勒合金(111)表面上高质量地外延生长IV族半导体(111)表面的技术。这种形成自旋电导结构的方法包括:第一铁磁层压步骤(S41),其中单晶铁磁Heusler合金(X (3-x) Sub> Y x Sub> Z,其中Z对应于构成元素的IV族半导体)被层叠在具有以米勒指数(111)为生长面的表面的IV族半导体衬底上。金属供给停止工序(S42),其停止供给构成铁磁性Heusler合金的元素的金属(相当于X (3-x) Sub> Y x Sub>)。半导体供应停止步骤(S44),用于在构成IV族半导体表面的状态(S43)停止对构成强磁性Heusler合金的IV族半导体(相当于Z族)的供应的步骤(S43)。半导体层压步骤(S45),用于将IV族半导体层压在最外表面上形成的IV族半导体表面上。
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