NON-VOLATILE CHARGE CAPTURE STORAGE DEVICE, METHOD FOR PREPARING SAME AND APPLICATION THEREOF

摘要

A non-volatile charge capture storage device, a method for preparing the same and an application thereof. The preparation method is simple to operate and easy to control, and the nano-microcrystal acting as a storage medium in the obtained storage device is evenly distributed. The preparation method includes the steps of: a) forming a tunneling layer on the substrate surface; b) forming a (ZrO₂)_x(M)_1-x thin film with homogeneous composition acting as a storage layer on the tunneling layer, wherein l x 0.5, M is SiO₂ or Al₂O₃; c) forming a barrier layer on the storage layer; d) and annealing the above prepared sample so as to precipitate the nano-microcrystal ZrO₂ from the storage layer to act as the storage medium. By way of high temperature annealing processing, the nano-microcrystal ZrO₂ is precipitated from the parent phase of the storage layer, thereby realizing the effect of nano-microcrystal storage. The nano-microcrystal acting as the storage medium obtained in the method is evenly distributed in the non-crystal parent phase.