PROTON DOPED ZINC OXIDE NANO-STRUCTURE, A SEMICONDUCTOR NANO-DEVICE USING THE SAME, AND A METHOD FOR MANUFACTURING THE NANO-STRUCTURE CAPABLE OF UNIFORMLY INJECTING PROTONS THROUGH AN ION IMPLANTING PROCESS

摘要

PURPOSE: A proton doped zinc oxide nano-structure, a semiconductor nano-device using the same, and a method for manufacturing the nano-structure are provided to facilitate a proton doped zinc oxide nano-structure synthesizing process.;CONSTITUTION: A proton doped zinc oxide nano-structure includes at least one zinc oxide nano-structure and protons(200). Crystals are vertically aligned and grown in the zinc oxide nano-structure. The protons are introduced into the zinc oxide nano-structure by the irradiation of beam based on 0.1keV to 1MeV energy. The particle density of the protons is between 10^11 and 10^18 particle/cm^2. The zinc oxide nano-structure is grown one substrate(300) selected from sapphire, GaN, Si, SiO, ITO, and metals.;COPYRIGHT KIPO 2012