ANTI-SCATTER GRID AND A MANUFACTURING METHOD THEREOF CAPABLE OF MASSIVELY PRODUCING WITH A MINUTE ANTI-SCATTER GRID WITH LOW COST BY USING A SEMICONDUCTOR PROCESS TECHNOLOGY

摘要

PURPOSE: An anti-scatter grid and a manufacturing method thereof are provided to easily form a silicon frame of a plurality of vertical partition walls by using a crystalline wet etch process of silicon and an ultraviolet exposure process.;CONSTITUTION: An anti-scatter grid(10) includes a vertical partition wall which is parallelly arranged in a vertical crystal face of a crystalline substrate. A silicon frame(11) includes a base common body part which connects a plurality of vertical partition walls. A X-ray absorber metal(20) is formed on the silicon frame. A scattering X-ray(32) generated by an subject(40) is dampened with the X-ray absorber metal of the vertical partition walls. A X-ray(33) arrives in a X-ray detector(50) passing through a transmitting material(25). The X-ray absorber metal is composed of nickel, copper, gold, and aluminum etc.;COPYRIGHT KIPO 2012