VERTICAL ELECTRODE STRUCTURE WHICH USES A TRENCH AND A MANUFACTURING METHOD THEREOF FOR FORMING AN ELECTRODE STRUCTURE WHICH HAS A SIZE OF HUNDREDS NANOMETERS OR LESS WITH FAST PROCESSING TIME AND LOW PROCESSING COSTS

摘要

PURPOSE: A vertical electrode structure which uses a trench and a manufacturing method thereof are provided to perform a deposition process when a substrate is inclined to a predetermined direction, thereby effectively controlling a distance between electrodes.;CONSTITUTION: A trench is formed on a predetermined region of a semiconductor substrate(S110). The semiconductor substrate is inclined to a predetermined direction(S120). An electrode layer is respectively formed on a predetermined region inside and outside of the trench(S130). A predetermined liquid material is sprayed on the substrate(S140). A solidified material in which the electrode layer is transferred is separated from the substrate(S150).;COPYRIGHT KIPO 2012