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ELECTROLESS SILVER PLATING SOLUTION FOR SEMICONDUCTOR WIRING, AN ELECTROLESS PLATING METHOD USING THE SAME TO OBTAIN A DENSE SILVER COATING LAYER WITHOUT PITS OR CRACKS, AND A SILVER COATING LAYER PREPARED BY THE SAME
ELECTROLESS SILVER PLATING SOLUTION FOR SEMICONDUCTOR WIRING, AN ELECTROLESS PLATING METHOD USING THE SAME TO OBTAIN A DENSE SILVER COATING LAYER WITHOUT PITS OR CRACKS, AND A SILVER COATING LAYER PREPARED BY THE SAME
PURPOSE: Electroless silver plating solution for semiconductor wiring, an electroless plating method using the same, and a silver coating layer prepared by the same are provided to implement efficient and stable electroless plating at low temperatures.;CONSTITUTION: Electroless silver plating solution for semiconductor wiring comprises silver nitrate as metal salt, formalin as reductant, and ammonia solution as complexing agent. The plating solution also includes one of ethylenediamine and ethylenediaminetetraacetic acid(EDTA) as complexing agent. In the plating solution, the concentration of silver nitrate is 0.5-5 g/l and the concentration of formalin is 5-30 ml/l.;COPYRIGHT KIPO 2012
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机译:目的:提供用于半导体布线的化学镀银溶液,使用该溶液的化学镀方法以及由其制备的银涂层,以在低温下实现有效而稳定的化学镀。;构成:用于半导体布线的化学镀银溶液包括硝酸银作为金属盐,福尔马林作为还原剂和氨溶液作为络合剂。镀液还包含乙二胺和乙二胺四乙酸(EDTA)中的一种作为络合剂。在镀液中,硝酸银的浓度为0.5-5 g / l,福尔马林的浓度为5-30 ml / l。; COPYRIGHT KIPO 2012
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