首页> 外国专利> SYNTHESIS OF SILVER, ANTIMONY, AND TIN DOPED BISMUTH TELLURIDE NANOPARTICLES AND BULK BISMUTH TELLURIDE TO FORM BISMUTH TELLURIDE COMPOSITES

SYNTHESIS OF SILVER, ANTIMONY, AND TIN DOPED BISMUTH TELLURIDE NANOPARTICLES AND BULK BISMUTH TELLURIDE TO FORM BISMUTH TELLURIDE COMPOSITES

机译:银,锑和锡掺杂铋碲化物纳米粒子和大块铋碲化物的合成,形成铋碲化物复合材料

摘要

According to various aspects, exemplary embodiments are provided of thermoelectric materials, which embodiments may have improved figure of merit. In one exemplary embodiment, a thermoelectric material generally includes bismuth telluride nanoparticles, which may be undoped or doped with at least one or more of silver, antimony, tin, and/or a combination thereof. The bismuth telluride nanoparticles may be dispersed in a matrix material comprising particulate bismuth telluride. Methods for making undoped and doped bismuth telluride nanoparticles are also disclosed, which may include a solvothermal method for making bismuth telluride nanoparticles having a size ranging from 1 to 200 nanometers.
机译:根据各个方面,提供了由热电材料制成的示例性实施例,这些实施例可以具有改进的品质因数。在一个示例性实施例中,热电材料通常包括碲化铋纳米颗粒,其可以不掺杂或掺杂有银,锑,锡和/或其组合中的至少一种或多种。碲化铋纳米颗粒可以分散在包含微粒状碲化铋的基质材料中。还公开了用于制备未掺杂和掺杂的碲化铋纳米颗粒的方法,其可以包括用于制备尺寸为1至200纳米的碲化铋纳米颗粒的溶剂热法。

著录项

  • 公开/公告号KR20120064680A

    专利类型

  • 公开/公告日2012-06-19

    原文格式PDF

  • 申请/专利权人 LAIRD TECHNOLOGIES INC.;

    申请/专利号KR20127006834

  • 发明设计人 PURKAYASTHA ARUP;JOSHI PURUSHOTTAM;

    申请日2010-07-30

  • 分类号H01L35/18;

  • 国家 KR

  • 入库时间 2022-08-21 17:09:47

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