首页> 外国专利> METHOD FOR DISPERSING AND STABILIZING QUANTUM DOTS OR QUANTUM WIRES IN ZEOLITE AND QUANTUM DOT-CONTAINING OR QUANTUM WIRE-CONTAINING ZEOLITE BASED ON THE METHOD CAPABLE OF UNIFORMLY DISPERSING QUANTUM DOTS IN ANION-CHARGED ZEOLITE ACCORDING TO THE KINDS OF COUNTER CATIONS OF THE ZEOLITE

METHOD FOR DISPERSING AND STABILIZING QUANTUM DOTS OR QUANTUM WIRES IN ZEOLITE AND QUANTUM DOT-CONTAINING OR QUANTUM WIRE-CONTAINING ZEOLITE BASED ON THE METHOD CAPABLE OF UNIFORMLY DISPERSING QUANTUM DOTS IN ANION-CHARGED ZEOLITE ACCORDING TO THE KINDS OF COUNTER CATIONS OF THE ZEOLITE

机译:基于能够根据种类的角度均匀地分散带​​负电荷的沸石中的量子点的方法,分散和稳定沸石中的量子点或量子线以及包含量子点的或包含量子线的沸石

摘要

PURPOSE: A method for dispersing and stabilizing quantum dots or quantum wires in zeolite and quantum dot-containing or quantum wire-containing zeolite based on the method are provided to uniformly disperse quantum dots or quantum wires in the cage of the zeolite.;CONSTITUTION: Zeolite containing quantum dots or quantum wires is treated with basic gas. The quantum dots or the quantum wires are uniformly dispersed in the pores of the zeolite. The quantum dots or the quantum wires are based on metals, oxides, or compound semiconductors. The compound semiconductors are selected from a group including CdS, CdO, CdSe, CdTe, ZnS, ZnO, ZnSe, ZnTe, MnS, MnO, MnSe, MnTe, MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTE, HgO, HgS, HgSe, HgTe, Al_2O_3, Al_2S_3, Al_2Se_3, Al_2Te_3, Ga_2O_3, Ga_2S_3, Ga_2Se_3, Ga_2Te_3, In_2O_4, In_2S_3, In_2Se_3, In_2Te_3, SiO_2, GeO_2, SnO_2, SnS, SnSe, SnTe, PbO, PbO2, PbS, PbSe, PbTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BP, Si, Ge, or the combination of the same.;COPYRIGHT KIPO 2012
机译:目的:提供一种在沸石中分散和稳定量子点或量子线的方法,以及基于该方法的含量子点或含量子线的沸石,以将量子点或量子线均匀地分散在沸石的笼中。含有量子点或量子线的沸石用碱性气体处理。量子点或量子线均匀地分散在沸石的孔中。量子点或量子线基于金属,氧化物或化合物半导体。化合物半导体选自CdS,CdO,CdSe,CdTe,ZnS,ZnO,ZnSe,ZnTe,MnS,MnO,MnSe,MnTe,MgO,MgS,MgSe,MgTe,CaO,CaS,CaSe,CaTe,SrO ,SrS,SrSe,SrTe,BaO,BaS,BaSe,BaTE,HgO,HgS,HgSe,HgTe,Al_2O_3,Al_2S_3,Al_2Se_3,Al_2Te_3,Ga_2O_3,Ga_2S_3,Ga_2Se_3,Ga_2Te_3,In_2O_3,In_2O_3,In_2O_3,In_2O_3,In_2O_3,In_2O_3, ,SnO_2,SnS,SnSe,SnTe,PbO,PbO2,PbS,PbSe,PbTe,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InN,InP,InAs,InSb,BP,Si,Ge或相同的组合。; COPYRIGHT KIPO 2012

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