METHOD FOR MANUFACTURING AN OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR WITH OFFSET CAPABLE OF PREVENTING A BIG DROP OF ELECTRIC FIELD EFFECT MOBILITY, AN ACTIVE OPERATING DISPLAY DEVICE THEREOF, AND AN ACTIVE OPERATING SENSOR DEVICE THEREOF

摘要

PURPOSE: A method for manufacturing an oxide semiconductor thin film transistor with offset, an active operating display device thereof, and an active operating sensor device thereof are provided to form offset between a gate and a drain, the gate and a source, or the gate and a source drain, thereby eliminating parasitic capacitance.;CONSTITUTION: A source(15) and a drain(16) are formed on an oxide semiconductor. Offset is formed on both the source and the drain. Parasitic capacitance is minimized between a drain and a gate. A passivation layer(17) is formed on the source and the drain. A pixel electrode(18) is formed on the passivation layer. The pixel electrode has a contact hole which contacts the drain.;COPYRIGHT KIPO 2013