METHOD FOR FABRICATING FEW-LAYERED GRAPHENE OXIDE-BASED REDUCED GRAPHENE OXIDE FIELD EFFECT TANSISTOR BASED ON BOTTOM CONTACTS

摘要

PURPOSE: A method for fabricating a field effect transistor based on a reduced graphene oxide using a floor contact graphene oxide is provided to efficiently manufacture a graphene oxide channel having a single layer or a few layers by using solution pre-processing and spin coating which can improve solvent dispersion. CONSTITUTION: A silicon oxide substrate(120) is formed on a silicon substrate(110). An electrode(130) reacting with a source electrode and a drain electrode is formed on the silicon oxide substrate. A graphene oxide dispersion solution is coated on the substrates. A graphene oxide is adsorbed between the drain electrode and the source electrode. The adsorbed graphene oxide is reduced.