METHOD FOR PREPARING SILICON NITRIDE ANTI-REFLECTION COATING AND SILICON SOLAR CELL USING THE SAME

摘要

PURPOSE: A manufacturing method of a silicon nitride antireflection layer and a silicon solar cell using the same are provided to make simultaneously the silicon nitride antireflection layer with a texturing effect and a p-n junction from a single process, thereby simplifying manufacturing processes. CONSTITUTION: A dopant including silicon oxide layer(200) is formed using a sol-gel method by applying an aqueous application solution on a semiconductor substrate. The aqueous application solution includes a silicon oxide(SiO2) precursor and a dopant precursor. An emitter layer(300) by a p-n junction formation is formed with diffusion of a dopant by heat treating of the dopant including silicon oxide layer in a nitriding atmosphere and simultaneously a silicon nitride layer(400) is formed by a nitride in a silicon oxide layer on the semiconductor substrate. The silicon nitride layer acts as an antireflection layer and also provides a surface texturing effect at the same time.