首页> 外国专利> Method for analyzing scattering parameter of measurement object e.g. semiconductor component, involves separating and demodulating tapped reference signals of incident wave and tapped returning wave of reflected wave at measuring point

Method for analyzing scattering parameter of measurement object e.g. semiconductor component, involves separating and demodulating tapped reference signals of incident wave and tapped returning wave of reflected wave at measuring point

机译:分析测量对象的散射参数的方法半导体组件,涉及在测量点分离和解调入射波的抽头参考信号和反射波的抽头返回波

摘要

The method involves transferring generator signal to input switch (2). The generator signal is forwarded as leading wave to coupling unit (3-1,3-2) selected by input switch. The reference signal of the incident wave is tapped in the coupling unit. The reflected wave from object is forwarded towards coupling unit, and returning wave relative to reflected wave is tapped at coupling unit. The tapped signals are sent to single measuring point (5), and are separated and demodulated in point. Th behavior of scattering-parameters of the object is calculated in the point. An independent claim is included for device for analyzing scattering parameter of measurement object.
机译:该方法包括将发生器信号传输到输入开关(2)。发生器信号作为超前波转发到由输入开关选择的耦合单元(3-1,3-2)。入射波的参考信号在耦合单元中被分接。来自物体的反射波被转发到耦合单元,相对于反射波的返回波在耦合单元处被分接。抽头信号被发送到单个测量点(5),并在该点被分离和解调。在该点计算物体的散射参数的行为。本发明还包括一种用于分析测量对象散射参数的装置。

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