Metal oxide semiconductor type active pixel image sensor, has application unit applying different potential i.e. positive potential and negative potential, to P type surface region during transfer phases in transfer gates of active pixels

摘要

The sensor has active pixels, each provided with transfer gates (TR1, TR2) to transfer charges between a photodiode (PHD) and a storage node and between the node and another storage node, respectively. Reset gates reset potential of photodiode and the latter storage node at beginning end of charge integration period, respectively. The former storage node is formed by N type semiconductor region (28) covered by a P type surface region (26). An application unit applies potential (Vst) i.e. positive potential and negative potential, to the surface region during transfer phases in the gates. An independent claim is also included for a method of controlling pixels of image sensor.