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PEELING METHOD, PROGRAM, COMPUTER STORAGE MEDIUM, PEELING DEVICE, AND PEELING SYSTEM

机译:上等方法,程序,计算机存储介质,上等设备和上等系统

摘要

PROBLEM TO BE SOLVED: To prevent oxidation of a surface of a processed substrate during peeling processing between the processed substrate and a support substrate, which involves heating processing.SOLUTION: A polymerized wafer is placed at a position in a processing space between a first holding part and a second holding part, which is not in contact with the first holding part and the second holding part, by a lifting mechanism and an inactive gas is supplied into the processing space from a gas supply pipe (Process A1). Then, the second holding part is moved up by a moving mechanism and a processed wafer and a support wafer are respectively held by the first holding part and the second holding part (Process A2). Subsequently, the second holding part is moved in the horizontal direction by the moving mechanism while the processed wafer and the support wafer, respectively supported by the first holding part and the second holding part, are heated to peel the processed wafer from the support wafer (Process A3). Then, the inactive gas is supplied to the processed wafer delivered from the first holding part by a bernoulli chuck (Process A4).
机译:解决的问题:为了防止在处理后的基板和支撑基板之间进行剥离处理期间处理后的基板表面氧化,这涉及加热处理。解决方案:将聚合的晶片放置在第一次固定之间的处理空间中的位置。通过提升机构与不与第一保持部和第二保持部接触的第二保持部和第二保持部,从供气管向处理空间内供给惰性气体(工序A1)。然后,通过移动机构使第二保持部上升,并通过第一保持部和第二保持部分别保持处理后的晶片和支撑晶片(工序A2)。随后,第二保持部通过移动机构在水平方向上移动,同时加热分别由第一保持部和第二保持部支撑的处理后的晶片和支撑晶片,以从支撑晶片上剥离处理后的晶片(程序A3)。然后,通过伯努利吸盘将惰性气体提供给从第一保持部输送的处理后的晶片(处理A4)。

著录项

  • 公开/公告号JP2012231127A

    专利类型

  • 公开/公告日2012-11-22

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LTD;

    申请/专利号JP20120060128

  • 发明设计人 HIRAKAWA OSAMU;HONDA MASARU;

    申请日2012-03-16

  • 分类号H01L21/02;H01L21/683;

  • 国家 JP

  • 入库时间 2022-08-21 17:00:19

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