METHOD OF MANUFACTURING RESISTANCE-CHANGE TYPE NON-VOLATILE STORAGE DEVICE AND RESISTANCE-CHANGE TYPE NON-VOLATILE STORAGE DEVICE

摘要

The method includes: a step of forming an MSM diode element (10a) on a substrate (100); a step of forming a resistance-change element (10b) on the MSM diode element (10a); a step of covering the sidewall of the semiconductor layer (105) of the MSM diode element (10a) and forming a first oxygen barrier layer (109a) that does not cover at least part of the sidewall of a resistance-change layer (107) of the resistance-change element (10b); and a step of oxidising the sidewall of the resistance-change layer (107) that was exposed, not being covered by the first oxygen barrier layer (109a).