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GaN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION
GaN-BASED LASER DIODES WITH MISFIT DISLOCATIONS DISPLACED FROM THE ACTIVE REGION
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机译:从有源区错位错位的GaN基激光二极管
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摘要
A GaN-based edge emitting laser is provided comprising a semi-polar GaN substrate, an active region, an N-side waveguiding layer, a P-side waveguiding layer, an N-type cladding layer, and a P-type cladding layer. The GaN substrate is characterized by a threading dislocation density on the order of approximately 1×106/cm2. The strain-thickness product of the N-side waveguiding layer exceeds its strain relaxation critical value. In addition, the cumulative strain-thickness product of the active region calculated for the growth on a the relaxed N-side waveguiding layer is less than its strain relaxation critical value. As a result, the N-side interface between the N-type cladding layer and the N-side waveguiding layer comprises a set of N-side misfit dislocations and the P-side interface between the P-type cladding layer and the P-side waveguiding layer comprises a set of P-side misfit dislocations. Additional embodiments are disclosed and claimed.
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机译:提供了一种基于GaN的边缘发射激光器,其包括半极性GaN衬底,有源区,N侧波导层,P侧波导层,N型覆层和P型覆层。 GaN衬底的特征在于大约为1×106 / cm 2的螺纹位错密度。 N侧波导层的应变厚度积超过其应变松弛临界值。另外,针对在松弛的N侧波导层上的生长而计算出的活性区域的累积应变厚度积小于其应变松弛临界值。结果,N型包覆层与N侧波导层之间的N侧界面包括一组N侧错配位错,并且P型包覆层与P侧之间的P侧界面波导层包括一组P侧失配位错。公开并要求保护另外的实施例。
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