Method of forming trench guard ring of Silicon PhotomultiplierSiPM and the SiPM manufactured by using the same

摘要

PURPOSE: it is a kind of formed groove protective ring silicon photomultiplier and being provided with for silicon photoelectric multiplier prevent dark counting phenomenon, pass through inhibit between current leakage avalanche photodide. ;CONSTITUTION:P types epitaxial layer (120) is formed on silicon substrate (110). P-type epitaxial layer is formed on corresponding p-type electric-conducting layer (130). Oxidation film is formed in p-type epitaxial layer. Silicon nitride film is formed in oxidation film. Photoresist is applied to silicon nitride film. ;The 2013 of copyright KIPO submissions