BINARY TERNARY METAL CHALCOGENIDE MATERIALS AND A METHOD FOR MANUFACTURING AND USING THE SAME CAPABLE OF SYNTHESIZING METAL CHALCOGENIDE USING A CHEMICAL VAPOR DEPOSITION PROCESS, AN ATOMIC LAYER DEPOSITION PROCESS, OR A WET CHEMICAL PROCESS

摘要

PURPOSE: Binary ternary metal chalcogenide materials and a method for manufacturing and using the same are provided to generate the ligand exchanging reaction of metal compounds with nucleophilic substituents and organosilyl tellurium or organosilyl selenium to manufacture metal chalcogenide.;CONSTITUTION: A method for manufacturing binary ternary metal chalcogenide materials includes the following: a substrate is contacted to silyl-chalcogen selected from a group including silyl tellurium and silyl selenium; the substrate is contacted to a germanium compound selected from a group including Ge(OR)_2, Ge(NR_2)_2, and the combination of the same; and the substrate is contacted to a metal compound represented by chemical formula, MX_n.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Remaining mass: 4.91%(383.0 °C); (BB) Temperature /°C; (CC) TGA/DSC of bis(trimethylsilyl) tellurium