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LIFT-OFF PROCESS FOR GaN FILMS FORMED ON SiC SUBSTRATE AND DEVICES FABRICATED USING THE METHOD
LIFT-OFF PROCESS FOR GaN FILMS FORMED ON SiC SUBSTRATE AND DEVICES FABRICATED USING THE METHOD
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机译:用该方法在SiC衬底上形成GaN薄膜的起升过程及装置
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摘要
A method for fabricating a high light extraction photonic device is disclosed. A lift-off layer is grown on a substrate. An epitaxial semiconductor device structure is grown on the lift-off layer such that the lift-off layer is sandwiched between the device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate are flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and the lift-off layer. At least a portion of the lift-off layer is removed to separate the substrate from the device structure.
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