FINFET DESIGN WITH A TRENCH ISOLATION STRUCTURE AND A MANUFACTURING METHOD OF A FINFET

摘要

PURPOSE: A FinFET(Fin Field Effect Transistor) design and a manufacturing method of a FinFET are provided to improve hole mobility by using SiP, SiC, and a InAs or InP.;CONSTITUTION: A trench isolation structure is arranged on a semiconductor substrate to separate an NMOS area(1500) from a PMOS area. A first pin structure comprises silicon or SiGe arranged on the film of a III-V group semiconductor material with high band gap energy and a larger lattice constant than Ge. A second pin structure comprises silicon or SiGe arranged on a III-V group semiconductor material with high band gap energy and a smaller or the same lattice constant as Ge. A metal gate is vertically aligned on the first and second pin structures.;COPYRIGHT KIPO 2013;[Reference numerals] (1000) Complete strain Si_1-xGe_x: 1x0.25; (500) Mitigated III-V: InP, AllnAs, InGaAs, GaAsSb, etc.