METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE CAPABLE OF WIDENING A TOP INLET OF A VERTICAL CHANNEL HOLE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the difficulties of a deposition process and an etching process by supplying deposition gas and etching gas through a wide top inlet. CONSTITUTION: A mask layer is formed on a mold layer. A channel hole(103) is formed by an etching process using the mask layer. The mask layer is reduced. A spacer layer covers the reduced mask layer. A vertical channel(140) is electrically connected to a substrate.