CMP SLURRY COMPOSITION INCLUDING FIRST ABRASIVE PARTICLES AND SECOND ABRASIVE PARTICLES CAPABLE OF REGULARLY MAINTAINING THE POLISHING SPEED BY INCREASING THE INITIAL POLISHING RATE OF SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A CMP slurry composition is provided to have a high initial polishing speed and to scarcely have surface defects after polishing.;CONSTITUTION: A CMP slurry composition includes a solvent, functional additives, first abrasive particles and second abrasive particles. The first abrasive particles are first particles, and the second abrasive particles are secondary particles. A manufacturing method of the CMP slurry composition comprises a step of forming first abrasive particles with the liquid phase method, and second abrasive particles with the solid phase method; a step of manufacturing an abrasive particle dispersion solution by injecting the first and second abrasive particles into a solvent at a mass ratio of 2:8-8:2; and a step of adding additives to the dispersion solution.;COPYRIGHT KIPO 2013;[Reference numerals] (AA) Second particle : first particle = 5 : 5