FORMATION OF SIOCL-CONTAINING LAYER ON EXPOSED LOW-K SURFACES TO REDUCE LOW-K DAMAGE

摘要

PURPOSE: A method for forming a SiOCl-containing layer on an exposed low dielectric constant surface to reduce low-k damage is provided to easily form plasma by forming a via. CONSTITUTION: A substrate is prepared (310). A mask layer and a low dielectric constant layer are formed on the substrate. A structural feature part is formed on the low dielectric constant layer. A SiOCl-containing layer is formed on the exposed surface of the low dielectric constant layer and the mask layer (320). The anisotropy of the SiOCl-containing layer is removed (330). [Reference numerals] (310) Substrate, which has a mask layer and a low dielectric constant layer, is accommodated and its low dielectric constant layer has a structural feature unit, an etched pattern having come form the same pattern on the mask layer, formed using a lithography process; (320) SioCI layer is formed on the exposed surface of the low dielectric constant layer and the mask layer; (330) SiOCl-containing layer is anisotropically-removed both from the upper part of the mask layer and the bottom of the structural feature unit of the low dielectric constant layer while the remaining part of the SiOCI layer on the side walls of the structural feature unit remained intact; (340) Ashing process is performed in a way where at least one part of the mask layer is removed; (350) After the ashing process, the remaining part of the SiOCI layer on the side walls of the structural feature is selectively removed