首页> 外国专利> Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

Lithographic methods to reduce stacking fault nucleation sites and structures having reduced stacking fault nucleation sites

机译:减少堆叠缺陷成核点的光刻方法以及具有减少堆叠缺陷成核点的结构

摘要

Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.
机译:外延碳化硅层是通过在碳化硅衬底的表面上具有朝向晶体学方向的偏轴取向的特征来形成的。这些特征包括至少一个侧壁,该侧壁与晶体学方向不平行(即,倾斜或垂直)取向。然后,在其中包括特征的碳化硅衬底的表面上生长外延碳化硅层。

著录项

  • 公开/公告号KR101284398B1

    专利类型

  • 公开/公告日2013-07-09

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20067019093

  • 发明设计人 할린 크리스터;렌덴만 하인쯔;

    申请日2005-02-14

  • 分类号H01L21/20;H01L21/04;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:54

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