首页> 外国专利> Inductive proximity switch, particularly all-metal inductive proximity switch for reacting to approach of electrically conductive object, has inductor formed as low temperature penetrating ceramic body with conductor path as shielding layer

Inductive proximity switch, particularly all-metal inductive proximity switch for reacting to approach of electrically conductive object, has inductor formed as low temperature penetrating ceramic body with conductor path as shielding layer

机译:电感式接近开关,特别是用于对导电物体的接近作出反应的全金属电感式接近开关,具有形成为低温穿透陶瓷体且导体路径作为屏蔽层的电感器

摘要

The inductive proximity switch has a generator (2) for generation of a transmission signal, an inductor (3) for generating an alternating magnetic field influenced by a conductive target and a control unit (5) for generating a switch signal. The inductor is designed as low temperature penetrating ceramic body with multiple primary conductor paths. The ceramic body comprises ferrite (7), and has a secondary conductor path, which serves as shielding layer (6) and is connected with the mass.
机译:感应式接近开关具有用于产生传输信号的发生器(2),用于产生受导电靶影响的交变磁场的电感器(3)以及用于产生开关信号的控制单元(5)。该电感器设计为具有多个初级导体路径的低温穿透陶瓷体。陶瓷体包括铁氧体(7),并具有次级导体路径,该次级导体路径用作屏蔽层(6)并与块体连接。

著录项

  • 公开/公告号DE102011088752A1

    专利类型

  • 公开/公告日2013-06-20

    原文格式PDF

  • 申请/专利权人 IFM ELECTRONIC GMBH;

    申请/专利号DE20111088752

  • 发明设计人 GUNDLACH JOCHEN;

    申请日2011-12-15

  • 分类号H03K17/95;

  • 国家 DE

  • 入库时间 2022-08-21 16:22:19

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