Producing silicon ingot, useful to produce silicon wafer, comprises e.g. placing seed preset on container bottom wall, and directionally solidifying silicon melt, where phase boundary is influenced such that tendency for twinning is reduced

摘要

Producing silicon ingot, comprises providing a container (2) for receiving silicon melt (3), comprising a bottom wall (5) and side walls (6), providing a temperature control device for controlling temperature field in the container, providing at least one sheet-like monocrystalline seed preset (7), arranging the seed preset on the bottom wall of the container, providing the silicon melt in the container, and directionally solidifying the silicon melt, where a phase boundary is influenced by controlling temperature field in the container, such that a tendency for twinning is reduced. Producing silicon ingot, comprises (a) providing a container (2) for receiving silicon melt (3), comprising a bottom wall (5) and side walls (6), (b) providing a temperature control device for controlling temperature field in the container, (c) providing at least one sheet-like monocrystalline seed preset (7) having an axial orientation comprising (110)-, (100)- or (111)-orientation, (d) arranging the seed preset on the bottom wall of the container, (e) providing the silicon melt in the container, and (f) directionally solidifying the silicon melt in the container, where a phase boundary for the liquid silicon melt is displaced in a growth direction, and the phase boundary is influenced by controlling the temperature field in the container using the temperature control device, such that a tendency for twinning is reduced.