Extended drain P-channel metal-oxide-semiconductor transistor manufacturing method for voltage regulation device of mobile phone, involves forming drain contact area in P-type housing remote from P-type housing/N-type body housing junction

摘要

The method involves forming a P-type housing (23) juxtaposed with an N-type body housing (25) of an extended drain P-channel metal-oxide-semiconductor (MOS) transistor, where the P-type housing is formed during formation of P-type body housings of N-channel transistors. A drain contact area (37) is formed in the P-type housing remote from a junction between the P-type housing and the N-type body housing. An independent claim is also included for an extended drain P-channel MOS transistor.