首页> 外国专利> SUPERLUMINESCENT DIODE, OPTICAL INTERFERENCE TOMOGRAPHIC IMAGING DEVICE COMPRISING THE SAME, AND METHOD OF CONTROLLING SUPERLUMINESCENT DIODE

SUPERLUMINESCENT DIODE, OPTICAL INTERFERENCE TOMOGRAPHIC IMAGING DEVICE COMPRISING THE SAME, AND METHOD OF CONTROLLING SUPERLUMINESCENT DIODE

机译:超发光二极管,包括该超发光二极管的光学成象断层成像设备以及控制超发光二极管的方法

摘要

PROBLEM TO BE SOLVED: To provide an SLD (superluminescent diode) capable of controlling an optical output and a spectral shape of SLD light in a short time with ease and with accuracy when an upper electrode or a lower electrode is configured by a plurality of electrodes.;SOLUTION: A superluminescent diode comprises: an optical waveguide layer having a lower clad layer, an active layer, and an upper clad layer on a substrate; and an upper electrode and a lower electrode for making the active layer emit light. The superluminescent diode has such a configuration that the upper electrode or the lower electrode has a plurality of electrodes, and partial light in a plurality of light-emitting regions formed so as to correspond to the plurality of electrodes enters into the active layer of the other light-emitting region. A light receiving part for detecting a quantity of spontaneous emission light from at least one light-emitting region is arranged adjacently to the light-emitting region.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:当上电极或下电极由多个电极构成时,提供一种能够在短时间内容易且准确地控制SLD光的光输出和光谱形状的SLD(超发光二极管)。解决方案:一种超发光二极管,包括:光波导层,其在基板上具有下部覆盖层,有源层和上部覆盖层;以及上电极和下电极用于使活性层发光。超发光二极管具有这样的构造,即,上电极或下电极具有多个电极,并且形成为与多个电极相对应的多个发光区域中的部分光进入另一个的有源层。发光区域。与发光区域相邻地布置用于检测来自至少一个发光区域的自发发射光的量的光接收部分。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014120633A

    专利类型

  • 公开/公告日2014-06-30

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20120275123

  • 发明设计人 UCHIDA MAMORU;SUGA TAKAKO;

    申请日2012-12-17

  • 分类号H01L33/14;G01N21/17;

  • 国家 JP

  • 入库时间 2022-08-21 16:19:43

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