首页> 外国专利> ORGANIC SEMICONDUCTOR THIN FILM MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR DEVICE MANUFACTURING METHOD APPLYING THE SAME THERETO AND ORGANIC SEMICONDUCTOR DEVICE

ORGANIC SEMICONDUCTOR THIN FILM MANUFACTURING METHOD, ORGANIC SEMICONDUCTOR DEVICE MANUFACTURING METHOD APPLYING THE SAME THERETO AND ORGANIC SEMICONDUCTOR DEVICE

机译:有机半导体薄膜制造方法,适用于此的有机半导体器件制造方法及有机半导体装置

摘要

PROBLEM TO BE SOLVED: To enable more reliable formation of a single crystalline region and enable achievement of high carrier mobility.;SOLUTION: In an organic semiconductor thin film manufacturing method, an ink-repellent region 12a and an ink-attracting region 12b are provided on a surface of a substrate 12 where an ink 11 is coated and the ink-attracting region 12b is formed to have a first width a which is a width at a place to start coating and a second width b obtained by reducing the first width a. With this configuration, crystals of an organic semiconductor material which exist in a polycrystalline state at a position of the first width a can be single-crystallized at a position of the second width b. For this reason, from the position of the second width b, crystals of the organic semiconductor material can grow in single crystal form, and when the second width b is increased to a third width c, crystals can be grown by utilizing each single crystal as a starting point (nucleus). Accordingly, since the same crystal can be grown, a good crystal having a high degree of orientation can be grown thereby to enable achievement of high carrier mobility.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:为了能够更可靠地形成单晶区域并实现高的载流子迁移率;解决方案:在有机半导体薄膜的制造方法中,设置了拒墨区域12a和吸墨区域12b。在基板12的涂布有油墨11并且吸墨区域12b形成为具有在开始涂布的位置处的宽度的第一宽度a和通过减小第一宽度a而获得的第二宽度b的基板12的表面上。 。利用该构造,可以在第一宽度a的位置以多晶状态存在的有机半导体材料的晶体单晶。因此,从第二宽度b的位置起,有机半导体材料的晶体可以单晶形式生长,并且当第二宽度b增加至第三宽度c时,可以通过利用每个单晶作为晶体来生长晶体。起点(核)。因此,由于可以生长相同的晶体,因此可以生长具有高取向度的良好晶体,从而实现高载流子迁移率。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014053587A

    专利类型

  • 公开/公告日2014-03-20

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP20130073059

  • 申请日2013-03-29

  • 分类号H01L21/368;H01L51/05;H01L51/40;H01L29/786;H01L21/336;

  • 国家 JP

  • 入库时间 2022-08-21 16:18:51

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