首页> 外国专利> MASKING MATERIAL, MASKING METHOD, AND METHOD OF MANUFACTURING COATED MEMBER ON WHICH COATING FILM IS NOT PARTIALLY FORMED

MASKING MATERIAL, MASKING METHOD, AND METHOD OF MANUFACTURING COATED MEMBER ON WHICH COATING FILM IS NOT PARTIALLY FORMED

机译:在未部分形成涂层膜的情况下,制作材料,制作方法以及制造被覆成员的方法

摘要

PROBLEM TO BE SOLVED: To provide a masking material having superior heat resistance and capable of being repeatedly used, a method of manufacturing such a masking material, and a masking method using such a masking material.SOLUTION: A masking part 3 of a masking material 1 containing a magnetic component has a circular shape. The masking part 3 has a central part 4 that is more recessed than a circumferential part 5. In the masking material 1, a radius r (unit: mm) of a circle of the masking part 3, a maximum depth d (unit: mm) of the recess of the central part 4 relative to the circumferential part 5, a magnetic flux density B (unit: T) obtained by the measurement at a position separated by 1 cm in a direction parallel to a central axis of the circle of the masking part from a position giving the maximum depth in the masking part 3, and Shore D hardness Hs of the masking material 1 satisfy all of expressions of 0.045B...(1), 5.5B/(d/r)...(2), and 42Hs60...(3).
机译:解决的问题:为了提供具有优异的耐热性并且能够重复使用的掩膜材料,制造这种掩膜材料的方法,以及使用这种掩膜材料的掩膜方法。解决方案:掩膜材料的掩膜部分3。包含磁性成分的图1的形状为圆形。遮蔽部3具有比周向部5更凹陷的中央部4。在遮蔽材料1中,遮蔽部3的圆的半径r(单位:mm)为最大深度d(单位:mm)。 )相对于圆周部分5的中心部分4的凹部),通过在平行于中心圆的中心轴线的方向上相距1cm的位置处的测量获得的磁通密度B(单位:T)。从掩膜部3的最大深度的位置开始掩膜部,掩膜材料1的肖氏D硬度Hs满足0.045B ...(1),5.5B /(d / r)...的全部表达式。 (2)和42Hs60 ...(3)。

著录项

  • 公开/公告号JP2013233491A

    专利类型

  • 公开/公告日2013-11-21

    原文格式PDF

  • 申请/专利权人 LINTEC CORP;

    申请/专利号JP20120106356

  • 申请日2012-05-07

  • 分类号B05B15/04;B05D1/32;C25D13/00;

  • 国家 JP

  • 入库时间 2022-08-21 16:16:50

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