首页> 外国专利> SUPERLATTICE STRUCTURE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SUPERLATTICE STRUCTURE, AND METHOD OF MAKING THE SUPERLATTICE STRUCTURE

SUPERLATTICE STRUCTURE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING THE SUPERLATTICE STRUCTURE, AND METHOD OF MAKING THE SUPERLATTICE STRUCTURE

机译:超晶格结构,包括超晶格结构的半导体器件和半导体发光器件,以及制造该超晶格结构的方法

摘要

PROBLEM TO BE SOLVED: To provide a superlattice structure in which quantum-dot layers, even highly stacked, in quantum-dot nanowires are kept uniform in size, and a quantum-dot layer size between the quantum-dot nanowires also varies little.;SOLUTION: A superlattice structure includes a plurality of quantum-dot nanowires extending in a substantially vertical direction from a plane region. The quantum-dot nanowires have a structure of barrier layers and quantum-dot layers alternately stacked on the plane region. The quantum-dot nanowires are substantially the same in diameter in a stacking direction and substantially uniformly arranged at an area density of 4 nanowires/μm2 or more.;COPYRIGHT: (C)2014,JPO&INPIT
机译:要解决的问题:提供一种超晶格结构,其中量子点纳米线中即使高度堆叠的量子点层也保持大小均匀,并且量子点纳米线之间的量子点层大小也几乎没有变化。解决方案:超晶格结构包括多条量子点纳米线,这些量子点纳米线从平面区域沿基本垂直的方向延伸。量子点纳米线具有在平面区域上交替堆叠的势垒层和量子点层的结构。量子点纳米线在堆叠方向上的直径基本相同,并且以4纳米线/μm 2 或更高的面积密度基本均匀地排列。;版权所有:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2013239690A

    专利类型

  • 公开/公告日2013-11-28

    原文格式PDF

  • 申请/专利权人 SHARP CORP;UNIV OF TOKYO;

    申请/专利号JP20120187856

  • 申请日2012-08-28

  • 分类号H01L33/06;B82B1/00;H01L31/04;B82Y30/00;B82Y40/00;B82B3/00;H01L21/205;H01L21/203;H01L29/06;

  • 国家 JP

  • 入库时间 2022-08-21 16:15:37

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