A method for the integrated circuit device structure to nano-probing (nano-probing of integrated circuit device structure)

摘要

Topic Manner in order nanopurobingu to do device structure of the integrated circuit is offered.SolutionsThis manner using one which is approached to the 1st field field the whole 1st of device structure over, probe at least, includes the fact that it scans the primary charged particle beam, the 2nd field of device structure the mask is done from the primary charged particle beam. This manner in order to form secondary electron image, furthermore includes the fact that the 1st field of device structure and the secondary electron which is discharged at least from one probe are collected. Secondary electron image as the image formation part the 1st field and at least as one probe and a non image formation part includes with the 2nd field. As another manner, 2nd as for the field, because it is scan possible with the scan speed whose 1st is faster than the field with the charged particle beam, as for the 2nd field it is the image formation part of secondary electron image as a result. Choice figure Drawing 3