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High concentration P doped quantum dot solar cell by forced doping of INP and manufacturing method
High concentration P doped quantum dot solar cell by forced doping of INP and manufacturing method
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机译:强制掺杂inp的高浓度p掺杂量子点太阳能电池及其制造方法
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摘要
Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
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