Plating thick calculation program and plated thick calculation device and plated thick calculation manner

摘要

A computer readable recording medium stores therein a plated film thickness calculating program for a semiconductor integrated circuit producing process in which a plating treatment, a polishing treatment and an over-polishing treatment are performed. The plated film thickness calculating program performing a process includes simulating the plating treatment of plating the surface of the substrate for a given thickness of the conductor; calculating a thickness of the conductor to be removed by the polishing treatment until at least a part of the plateaus appears; calculating a maximum thickness of the conductor to be remained on any part of the plateaus after performing the polishing treatment; and repeating the simulating, the thickness calculation and the maximum thickness calculation by changing the given thickness until a minimum of the given thickness is determined in which the maximum thickness of the remaining conductor becomes less than a predetermined level.