Method of manufacturing as well as single crystal silicon carbide film-coated substrate of single crystal silicon carbide film-coated substrate and single crystal silicon carbide film

摘要

PROBLEM TO BE SOLVED: To provide a base material with a single crystal silicon carbide film having a high quality single crystal silicon carbide film which is less susceptible to stresses arising from a lattice mismatch with a silicon substrate or a single crystal silicon film formed on a substrate and has fewer crystal defects than ever, a manufacturing method of a single crystal silicon carbide film which makes it possible to form a high quality single crystal silicon carbide film with reduced crystal detects, and a manufacturing method of the base material with the single crystal silicon carbide film.;SOLUTION: A base material with a single crystal silicon carbide film of the present invention, designated by numeral 1, has a plurality of concaves 3 formed on the surface of a silicon substrate 2. Insulation film 4 containing silicon oxide is formed on the entire surface, including the inside surfaces of these concaves 3, of the silicon substrate 2. The upper ends of side walls of concaves 5 of the insulation film 4 are flattened, constituting a flat plane 6, to which a single crystal silicon carbide film 7 is joined, and the concaves 5 below the single crystal silicon carbide film 7 are left vacant.;COPYRIGHT: (C)2012,JPO&INPIT