III-nitride semiconductor growth substrate, III-nitride semiconductor free-standing substrate, and Group III nitride semiconductor device, method for producing these

摘要

PROBLEM TO BE SOLVED: To provide a group-III nitride semiconductor device, and a free-standing substrate for group-III nitride semiconductors and an epitaxial substrate for group-III nitride semiconductors, having good crystallinity for materials having growth temperatures at or below 1,050°C, such as AlGaN, GaN, and GaInN, and also for Al_xGa_1-xN of high Al compositions having high growth temperatures; and to provide a method for efficiently manufacturing the same.;SOLUTION: These are provided with a crystal growth substrate, at least the surface region of which includes an Al-containing group-III nitride semiconductor, and a scandium nitride film formed by nitrogen treatment of Sc (scandium) formed on top of the surface region.;COPYRIGHT: (C)2011,JPO&INPIT