CHARGE-TRAP TYPE FLASH MEMORY DEVICE HAVING LOW-HIGH-LOW ENERGY BAND STRUCTURE AS TRAPPING LAYER

摘要

A charge-trap type flash memory device having a low-high-low energy band as a trapping layer embeds Al₂O₃ between Si₃N₄ and HfO₂ as a CT layer. Most injected charged can be trapped at an interface of Si₃N₄/Al₂O₃. Al₂O₃ can also provide a high blocking effect for electronic dissipation. Therefore this invention can enhance the writing and retention characteristics for CT VNM.