Yttrium-doped Indium Oxide Transparent Conductive Thin-Film Transistor and Method for Making Same

摘要

The present invention provides a transistor and method for making the same. The transistor has an yttrium-doped indium oxide transparent conductive thin-film which is so fabricated with the method to reduce the formation of oxygen vacancies, suppress carrier concentration effectively, and decrease maximum defect density and thus suitable to be applied to the transistor.