Gallium arsenide solar cell with germanium/palladium contact

摘要

A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10⁻⁴ ohms-cm².