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Method of making a CMOS image sensor and method of suppressing dark leakage and crosstalk for a CMOS image sensor
Method of making a CMOS image sensor and method of suppressing dark leakage and crosstalk for a CMOS image sensor
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机译:制造CMOS图像传感器的方法以及抑制CMOS图像传感器的暗漏和串扰的方法
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摘要
A CMOS image sensor, in which an implantation process is performed on substrate under isolation structures each disposed between two adjacent photosensor cell structures. The implantation process is a destructive implantation to form lattice effects/trap centers. No defect repair process is carried out after the implantation process is performed. The implants can reside at the isolation structures or in the substrate under the isolation structures. Dark leakage and crosstalk are thus suppressed.
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