首页>
外国专利>
Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment
Increased density of low-K dielectric materials in semiconductor devices by applying a UV treatment
展开▼
机译:通过进行紫外线处理,可以提高半导体器件中低K介电材料的密度
展开▼
页面导航
摘要
著录项
相似文献
摘要
A silicon-based low-k dielectric material is formed on the basis of a single precursor material, such as OMTCS, without incorporating a porogen species. To this end, the initial deposition of the low-k dielectric material may be formed on the basis of a reduced process temperature, while a subsequent treatment, such as a UV treatment, may allow the adjustment of the final material characteristics without causing undue out-gassing of volatile organic components.
展开▼