Double-doped photovoltaic cell with heterojunction and manufacturing method

摘要

The cell has a heterojunction between a conductivity type crystalline semiconductor substrate (210) and a semiconductor material amorphous layer (220), where amorphous layer is formed on a face of the substrate. Another face of the substrate is covered by another amorphous layer (260). Third amorphous layer (225) has a doping level comprised between 1.10 power 16 and 1.10 power 18 atoms/cubic centimeter. The third amorphous layer is deposited directly on the former face of the substrate and covered by the former layer.