首页> 外国专利> MODIFIED HYDROGENATED POLYSILOXAZANE, COMPOSITION COMPRISING SAME FOR FORMING SILICA-BASED INSULATION LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATION LAYER, SILICA-BASED INSULATION LAYER, AND METHOD FOR PREPARING SILICA-BASED INSULATION LAYER

MODIFIED HYDROGENATED POLYSILOXAZANE, COMPOSITION COMPRISING SAME FOR FORMING SILICA-BASED INSULATION LAYER, METHOD FOR PREPARING COMPOSITION FOR FORMING SILICA-BASED INSULATION LAYER, SILICA-BASED INSULATION LAYER, AND METHOD FOR PREPARING SILICA-BASED INSULATION LAYER

机译:改性的氢化聚硅氧氮烷,用于形成基于二氧化硅的绝缘层的组成相同的成分,用于形成基于二氧化硅的绝缘层的成分的制备方法,基于二氧化硅的绝缘层以及用于制备二氧化硅的层的方法

摘要

Provided is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from a group consisting of polysilane, polycyclosilane, and silane oligomer. The modified hydrogenated polysiloxazane is configured such that the mole ratio of nitrogen atom to silicon atom is small, and therefore, the modified hydrogenated polysiloxazane can be applied to a composition for forming a silica-based insulation layer so as to significantly reduce film shrinkage when the silica-based insulation layer is formed.
机译:本发明提供一种改性的氢化聚硅氧烷,其通过使氢化聚硅氧烷与选自聚硅烷,聚环硅烷和硅烷低聚物的硅烷化合物反应而制备。改性的氢化聚硅氧杂氮烷被配置为使得氮原子与硅原子的摩尔比小,因此,可以将改性的氢化聚硅氧杂氮烷应用于形成基于二氧化硅的绝缘层的组合物,从而显着降低当有机硅层形成时的膜收缩。形成基于二氧化硅的绝缘层。

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