METHOD FOR PREPARING SOURCE-DRAIN QUASI-SOI MULTIGRID STRUCTURE DEVICE

摘要

Provided is a method for preparing a source-drain quasi-SOI multigrid structure device, comprising: forming an active region in the shape of a fin bar; forming an STI oxidation isolating layer; forming a polysilicon dummy gate structure; forming a source-drain extending region structure; forming a source-drain quasi-SOI structure; and forming a high-k metal gate structure. The method can be achieved with a technological method compatible with the traditional bulk silicon CMOS, can be integrated into a technological process very easily and can still maintain a smaller leakage current in the condition of a short channel length, thereby reducing the power consumption of a device.