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PROCESS FOR PRODUCING HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
PROCESS FOR PRODUCING HIGH-PURITY LANTHANUM, HIGH-PURITY LANTHANUM, SPUTTERING TARGET COMPRISING HIGH-PURITY LANTHANUM, AND METAL GATE FILM COMPRISING HIGH-PURITY LANTHANUM AS MAIN COMPONENT
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机译:制备高纯镧,高纯镧,包含高纯镧的溅射靶材以及包含高纯镧作为主要成分的金属栅膜的方法
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摘要
A high-purity lanthanum, characterized by having a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. A method for producing the high-purity lanthanum characterized by obtaining lanthanum crystal by subjecting a crude lanthanum metal raw material having a purity of 4N or less excluding the gas component to molten salt electrolysis at a bath temperature of 450 to 700° C., subjecting the lanthanum crystal to de-salting treatment, and removing volatile substances by performing electron beam melting, wherein the high-purity lanthanum has a purity of 5N or more excluding rare earth elements and gas components, and α-ray count number of 0.001 cph/cm2 or less. The object of the present invention is providing a technique capable of efficiently and stably providing a high-purity lanthanum with low α-ray, a sputtering target made from the high-purity lanthanum, and a metal gate thin film having the high-purity lanthanum as the main component.
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