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MAGNETIC JUNCTION, MAGNETIC MEMORY, METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS
MAGNETIC JUNCTION, MAGNETIC MEMORY, METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS
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机译:磁结,磁存储器,用于提供具有改进特性的磁结的方法和系统
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摘要
The present invention provides a method and a device for providing a magnetic memory including magnetic junction at a substrate. The device includes a RIE chamber and an ion milling chamber. The chambers are connected and the magnetic memory can move between the chambers without being exposed to an atmosphere. The method provides magnetic junction films and hard mask films at the magnetic junction films. A hard mask is formed from the hard mask film by using RIE. The magnetic junction films define at least a part of each magnetic junction by being ion milling processed without the magnetic memory being exposed to the atmosphere after RIE etching. The magnetic junction is provided. The magnetic junction includes a film to be fixed, non-magnetic spacer film, and a free film. The free film has a width which is equal or less than 20nm and capable of being switched when writing current is flowing through the magnetic junction. [Reference numerals] (102) RIE chamber; (104) Ion milling chamber; (110-1,110-2) Vacuum system
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