首页> 外国专利> MAGNETIC JUNCTION, MAGNETIC MEMORY, METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS

MAGNETIC JUNCTION, MAGNETIC MEMORY, METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING IMPROVED CHARACTERISTICS

机译:磁结,磁存储器,用于提供具有改进特性的磁结的方法和系统

摘要

The present invention provides a method and a device for providing a magnetic memory including magnetic junction at a substrate. The device includes a RIE chamber and an ion milling chamber. The chambers are connected and the magnetic memory can move between the chambers without being exposed to an atmosphere. The method provides magnetic junction films and hard mask films at the magnetic junction films. A hard mask is formed from the hard mask film by using RIE. The magnetic junction films define at least a part of each magnetic junction by being ion milling processed without the magnetic memory being exposed to the atmosphere after RIE etching. The magnetic junction is provided. The magnetic junction includes a film to be fixed, non-magnetic spacer film, and a free film. The free film has a width which is equal or less than 20nm and capable of being switched when writing current is flowing through the magnetic junction. [Reference numerals] (102) RIE chamber; (104) Ion milling chamber; (110-1,110-2) Vacuum system
机译:本发明提供了一种用于提供包括在基板上的磁性结的磁性存储器的方法和装置。该装置包括RIE室和离子研磨室。腔室被连接并且磁存储器可以在腔室之间移动而不暴露于大气。该方法提供了磁性结膜和在磁性结膜处的硬掩模膜。通过使用RIE由硬掩模膜形成硬掩模。磁结膜通过离子铣削加工而限定了每个磁结的至少一部分,而在RIE蚀刻之后磁存储器不暴露于大气。提供了磁性结。磁性结包括要固定的膜,非磁性隔离膜和自由膜。自由膜具有等于或小于20nm的宽度,并且当写入电流流过磁性结时能够被切换。 [附图标记](102)RIE室; (104)离子研磨室; (110-1,110-2)真空系统

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号