QUANTUM NANODOTS, TWO-DIMENSIONAL QUANTUM NANODOT ARRAY AND SEMICONDUCTOR DEVICE USING SAME AND MANUFACTURING METHOD THEREFOR

摘要

Provided are a quantum nanodot, a two-dimensional quantum nanodot array as well as a semiconductor device using the same and a production method therefor. A quantum nanodot 3 is formed of a semiconductor and has an outer diameter in two-dimensional directions which is not more than twice a bore radius of an exciton in the semiconductor. A two-dimensional quantum nanodot array 1 has such a structure that the quantum nanodots 3 are two-dimensionally and uniformly arranged with a spacing between the quantum nanodots 3 being 1 nm or more. Further, the two-dimensional nanodot array 1 may further include an intermediate layer 6 which is made of a semiconductor or an insulator and is filled between the quantum nanodot arrays 10. Since the quantum nanodots have high orientation and high density, a high quantum confinement effect is attained. Therefore, the quantum nanodot 3 made of Si produces direct transition type luminescence. Also, it is possible to control an optical property and a transport property of the two-dimensional quantum nanodot array 10 including the intermediate layer 6.